SEOUL – Samsung Electronics has officially launched an aggressive offensive in the artificial intelligence (AI) semiconductor market, marked by the world’s first mass production of 6th-generation High Bandwidth Memory (HBM4) and the development of the industry’s first Universal Flash Storage (UFS) 5.0 solution. These moves signify Samsung’s determination to solidify its leadership in the rapidly expanding AI hardware ecosystem.

HBM4: Surpassing $1 Billion in Revenue, Aiming for $10 Billion

According to industry sources on the 23rd, Samsung’s HBM4, which began mass production and shipment on February 19, 2026, has already exceeded $1 billion in revenue just four months after its launch. Industry projections suggest cumulative sales will surpass $1.2 billion by the end of June. Given the current momentum and the scaling of supply to meet surging demand from major GPU and ASIC (Application-Specific Integrated Circuit) clients, Samsung is well-positioned to hit the $10 billion annual revenue mark for HBM4 by year-end—an unprecedented figure for a newly launched memory product.

The explosive growth is driven by the global surge in AI infrastructure investment. With AI platforms like Nvidia’s "Vera Rubin NVL72" requiring hundreds of HBM4 chips per system, and global tech giants increasingly developing proprietary ASIC chips, the demand for high-performance memory is skyrocketing. Market research firm Counterpoint Research reports that while SK Hynix currently leads the HBM market, Samsung’s early entry into HBM4 supply is expected to rapidly narrow the gap and boost its market share throughout the year.

UFS 5.0: Redefining On-Device AI Storage

Complementing its HBM success, Samsung also announced the development of the industry’s first UFS 5.0 memory solution, specifically optimized for the "On-Device AI" era. Built on Samsung’s advanced 9th-generation V-NAND (V9) technology, the UFS 5.0 achieves a sequential read speed of 10.8 GB/s and a sequential write speed of 9.5 GB/s. These speeds are more than twice as fast as the existing UFS 4.1 standard, enabling the rapid processing of large-scale data required for running complex AI models locally on mobile devices.

Furthermore, the new solution features a 40% improvement in power efficiency compared to its predecessor, thanks to advanced technologies like clock gating and multi-voltage optimization. Designed with a compact form factor that is 16.7% smaller than previous generations, the UFS 5.0 offers greater design flexibility for flagship smartphones, Extended Reality (XR) headsets, and AI-enabled wearables. Mass production is scheduled to begin in the fourth quarter of 2026, with capacities of up to 1 terabyte (TB).

Strategic Outlook: Leading the AI Innovation Cycle

Choi Jang-seok, Vice President of the Product Planning Team at Samsung Electronics’ Memory Business, emphasized the company’s strategic vision: "In the era of on-device AI, storage is no longer just a space to keep data; it is a critical component that defines the AI user experience. With the development of the industry’s first UFS 5.0, we are setting a new standard for next-generation mobile storage and will continue to lead mobile AI innovation."

Market analysts, including Kim Dong-won of KB Securities, highlight that Samsung’s diversified customer base—which includes major ASIC players like Broadcom, Google, Amazon, Microsoft, and Meta—provides a robust foundation for continued shipment growth in the coming year. By integrating its world-class memory, foundry, and packaging capabilities, Samsung Electronics is positioning itself as a central pillar in the future of the global AI semiconductor landscape.